Especially suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, hifi amplifiers, signal processing circuits of television receivers. Ksc1815 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter value units vcbo collectorbase voltage 60 v vceo collectoremitter voltage 50 v vebo emitterbase voltage 5 v ic collector current 150 ma ib base. Recent listings manufacturer directory get instant insight into any electronic component. Eb series transistors eb03 features high voltage capability high speed switching wide soa application fluorescent lamp electronic ballast electronic transformer absolute maximum ratings tc25qc to126 parameter symbol value unit collectorbase voltage vcbo 600 v collectoremitter voltage vceo 400 v. Datasheet identification product status definition. Product specification shengyuan semiconductors 2004. T switching times note in resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage. Features, high voltage capability, high speed switching. December 2009 doc id 5263 rev 4 111 11 st07 high voltage fastswitching npn power transistor features dc current gain classification high voltage capability low spread of dynamic parameters very high switching speed applications electronic ballast for. E utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as maximum ratings, operating condition ranges, or.
General description npn high power bipolar transistor in a. Iebo emitter cutoff current v eb 5v, ic 0 1 ma hfe dc current gain vce 4v, ic 1a vce 4v, ic 3a 25. As c e f 1822 2125 2430 csl 03 c csl 03 e csl 03 f csl03rev261103e continental device india limited data sheet. High voltage fastswitching npn power transistor datasheet production data figure 1. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Mje03 switchmode series npn silicon power transistor.
A, february 2000 bd579 1 to126 npn epitaxial silicon transistor absolute maximum ratings tc25c unless otherwise noted. The tip31c is a base island technology npn power transistor in to220 plastic package with better performances than the industry standard tip31c that make this device suitable for audio, power linear and switching applications. Futuresource consulting ltd whether travelling on business or simply moving between meeting rooms, this ultramobile projector is the ideal choice for effective, stressfree presenting on the move. Product specification eb series transistors features application high voltage capability fluorescent lamp high speed switching electronic ballast eb03 wide soa electronic transformer absolute maximum ratings parameter collectorbase voltage collectoremitter voltage emitterbase voltage collector curren. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Eb03 pdf datasheet eb03 datasheet download shenzhen. Tip31 seriestip31a31b31c npn epitaxial silicon transistor. E03 datasheet, e03 pdf, e03 data sheet, e03 manual, e03 pdf, e03, datenblatt, electronics e03, alldatasheet, free, datasheet, datasheets, data. The lightweight, slim design of the epson eb1751, along with its carry case, makes it effortless to transport. The mje05 is a high voltage high speed npn transistor.
Eb03 datasheet, eb03 pdf, replacement, equivalent, data sheets, eb03 pinout, schematic, circuit. Datasheet identification product status definition advance information formative or in. Product specification eb series transistors features application high voltage capability fluorescent lamp high speed switching electronic ballast eb03 wide soa electronic transformer. In order to promote public education and public safety, equal justice for all, a better informed citizenry, the rule of law, world trade and world peace, this legal document is hereby made available on a noncommercial basis, as it is the right of all humans to. C945 transistor npn feature z excellent h fe linearity z low noise z complementary to a733 maximum ratings t a25.
To220 plasticencapsulate transistors03 transistor npnfeatures power switching applicationsmaximum ratings ta25unless otherwise notedsymbolparametervalueunit datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. High voltage fastswitching npn power transistor features dc current gain classification high voltage capability low spread of dynamic parameters very high switching speed applications electronic ballast for fluorescent lighting switch mode power supplies description the device is manufactured using high voltage. No identification needed full production this datasheet contains final specifications. D c1 c a a1 b b1 e f e1 l l1 e e1 to2203l package outline dimensions symbol a a1 b b1 c c1 d e e1 e e1 f l l1. Bc557, 557b general purpose transistor page 1 310505 v1. Internal schematic diagram features high voltage capability low spread of dynamic parameters very high switching speed applications electronic ballast for fluorescent lighting cfl smps for battery charger description. The datasheet is printed for reference information only.
It has a high collector emitter voltage of 400v with a continuous collector current of. T ordering information ordering number package pin assignment packing lead free halogenfree 1 2 3 mje03lxta3t mje03gxta3t to220 b c e tube. High voltage fastswitching npn power transistor stmicroelectronics. Electronic components datasheet search english chinese. Emitter general description this device is designed for high voltage, high speed switching characteristics required such as lighting system, switching mode power. Mje07 switchmode npn bipolar power transistor for switching power supply applications the mje07 is designed for high. Phpt60610ny 60 v, 10 a npn high power bipolar transistor 15 january 2019 product data sheet 1. Ebseries transistors shenzhen shengyuansemiconductors, eb03 pdf download etc, eb03 datasheet pdf, pinouts, data sheet, equivalent. Page 2 of 4 thermal characteristics symbol description mjd3055 unit rthjc thermal resistance from junction to case 8. Npn silicon power transistor, 03l pdf download unisonic technologies, 03l datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits electronic component search and free download site. Sbu03bd high voltage fastswitching npn power transistor features symbol very high switching speed 2. It is particularly suited for 115 and 220 v switch. Fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design.